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Product Detailed Parameters
- Description：TRANS NPN 100V 5A TO39
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：5:00 AM
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：1.2V @ 500mA, 5A
- Current - Collector Cutoff (Max)：100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 2A, 2V
- Power - Max：1 W
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 200°C
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39 (TO-205AD)
- Grade：-
- Qualification：-
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Overview
The 2N5339QFN is an NPN bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 5 A. The device is designed for through-hole mounting in a TO-39 (TO-205AD) metal can package, which provides robust thermal dissipation capabilities with a power rating of 1 W. This component is suitable for applications requiring reliable switching or amplification within moderate power limits.
Feature Summary
- NPN polarity configuration for standard switching and amplification circuits
- Through-hole mounting capability utilizing a durable metal can package
- Rated for 100 V collector-emitter voltage and 5 A collector current
Applications
- General-purpose electronic circuit switching
- Amplifier stages in audio or signal processing equipment
- Power regulation modules requiring moderate current handling
Procurement Notes
Verify the specific ordering suffix, such as /TR, to confirm the packaging format, as the base part number may refer to individual units while suffixes indicate tape and reel quantities. Ensure that the procurement documentation explicitly lists the manufacturer as Microchip Technology to avoid counterfeit components. Cross-reference the datasheet version to confirm compliance with RoHS standards if required for your manufacturing process.
Selection Notes
Select this component when a through-hole NPN transistor with a 100 V rating and 5 A current capacity is required. The TO-39 metal can package offers superior heat dissipation compared to plastic packages, making it suitable for higher thermal environments. Consider the 1 W power dissipation limit when designing heatsinking strategies for continuous operation.
Part Context
This transistor belongs to the family of single bipolar transistors produced by Microchip Technology. It serves as a discrete semiconductor solution for linear and switching applications. The TO-39 package is a legacy form factor often retained in industrial and military specifications for its mechanical strength and thermal performance relative to modern surface-mount alternatives.
Replacement Considerations
Consult official substitution guides for equivalent NPN transistors with matching voltage and current ratings. Verify pinout compatibility and thermal resistance characteristics before replacing the original component in existing designs.
