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The 2N5339T3 is a military-grade NPN bipolar junction transistor manufactured by Microchip Technology. It utilizes the TO-39 metal can package for through-hole mounting. The device supports a maximum collector-emitter voltage of 100 V and a continuous collector current of 5 A. Power dissipation is rated at 1 W with a junction temperature range extending from -65°C to +200°C. Minimum DC current gain is specified as 60 at 2 A and 2 V, while saturation voltage reaches 1.2 V at 5 A.
Verify that the specific suffix T3 corresponds to the intended reel or tape configuration if applicable, though standard documentation primarily references JAN2N5339 or 2N5339P. Confirm military grade status and RoHS exemption requirements directly with the manufacturer, as these components often fall outside standard environmental directives due to their specialized defense applications.
Select this component when extreme temperature resilience and high current capacity are required in a hermetically sealed metal package. The TO-39 form factor provides superior thermal management compared to plastic packages. Ensure circuit design accounts for the specific saturation voltage characteristics at high load currents to maintain efficiency.
This part belongs to the 2N5339 family of NPN transistors produced by Microchip Technology. While datasheets frequently list JAN2N5339 or 2N5339P, the T3 suffix typically indicates a specific packaging variant such as tape and reel for automated assembly within the same electrical specification envelope.
JAN2N5339 serves as the primary verified equivalent offering identical military specifications and pinout compatibility.