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Product Detailed Parameters
- Description：TRANS PNP 40V 0.5A TO-92-3
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 30mA, 300mA
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 50mA, 1V
- Power - Max：625 mW
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Fairchild Semiconductor 2N5366 is a PNP bipolar junction transistor (BJT) designed for switching and amplifier applications. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. Key electrical specifications include a maximum DC collector current of 300 mA, a collector-emitter voltage (VCEO) of 40 V, and a collector-base voltage (VCBO) of 40 V. The device features an emitter-base voltage (VEBO) rating of 4 V and a power dissipation capacity of 625 mW. It operates within a temperature range of -65°C to +150°C and offers a gain-bandwidth product (fT) of 250 MHz.
Feature Summary
- PNP polarity configuration suitable for general-purpose switching and amplification tasks
- Silicon-based construction ensuring stable performance across wide operating temperatures
- Through-hole mounting capability via the standard TO-92-3 leaded package
Applications
- General-purpose switching circuits
- Amplifier stages requiring PNP topology
- Low-power signal processing applications
Procurement Notes
Verify that the specific procurement lot matches the Fairchild Semiconductor manufacturer designation for the 2N5366 part number. Confirm RoHS compliance status and pinout orientation consistent with the TO-92-3 package specification before integration into designs. Ensure thermal management aligns with the 625 mW power dissipation limit under expected operating conditions.
Selection Notes
Select this component when a PNP silicon BJT with moderate current handling and high voltage ratings is required in a through-hole form factor. The 40 V breakdown voltage and 300 mA continuous current capability make it suitable for low-to-medium power applications. Consider the TO-92-3 package constraints for board space and thermal requirements compared to surface-mount alternatives.
Part Context
The 2N5366 belongs to the broader category of discrete bipolar junction transistors manufactured by Fairchild Semiconductor. As a PNP device, it serves as a fundamental active component in electronic circuits, contrasting with NPN variants in current flow direction. Its classification within the 2N series indicates adherence to established JEDEC-style numbering conventions for silicon transistors.
Replacement Considerations
Cross-reference with other PNP transistors featuring similar VCEO, IC, and package specifications. Verify pin compatibility and electrical characteristics against potential substitutes from different manufacturers to ensure functional equivalence without redesigning the circuit layout.
