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The Central Semiconductor 2N5366 APM PBFREE is a silicon PNP bipolar junction transistor designed for switching and amplification applications. It utilizes a TO-92-3 through-hole package configuration. Key electrical specifications include a maximum DC collector current of 300 mA and a collector-emitter voltage rating of 40 V. The device features a collector-base voltage of 40 V and an emitter-base voltage of 4 V. Power dissipation is rated at 625 mW, with a gain-bandwidth product of 250 MHz. Operating temperatures range from -65 C to +150 C.
Verify the specific suffix 'APM' against official datasheets to confirm packaging details, as standard listings may indicate bulk packaging. Ensure RoHS compliance documentation is obtained directly from the manufacturer or authorized distributor records. Cross-reference the part number with Central Semiconductor's current nomenclature to avoid discrepancies in ordering specifications.
Select this component when a PNP BJT with moderate current handling and high voltage tolerance is required. The TO-92-3 package facilitates easy manual soldering and prototyping. Consider the 625 mW power dissipation limit and thermal management requirements for the specific application environment. Verify that the 40 V breakdown ratings align with the circuit's maximum operating voltages.
This component belongs to the 2N53 series of discrete semiconductors manufactured by Central Semiconductor. The company specializes in a wide range of discrete devices including transistors, diodes, and thyristors. The 2N5366 variant represents a standard NPN/PNP complementary pair member often used in basic electronic designs requiring reliable switching performance.
The maximum collector-emitter voltage (VCEO) is 40 V.
No, the standard 2N5366 is housed in a TO-92-3 through-hole package.
The power dissipation (Pd) is rated at 625 mW.