2N5366 APM PBFREE

2N5366 APM PBFREE

$0.32
  • Description:40V 300MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:51590fff4630 Category: Brand:

  
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Product Detailed Parameters

  • Description:40V 300MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):300 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 30mA, 300mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 50mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5366 APM PBFREE

Overview

The Central Semiconductor 2N5366 APM PBFREE is a silicon PNP bipolar junction transistor designed for switching and amplification applications. It utilizes a TO-92-3 through-hole package configuration. Key electrical specifications include a maximum DC collector current of 300 mA and a collector-emitter voltage rating of 40 V. The device features a collector-base voltage of 40 V and an emitter-base voltage of 4 V. Power dissipation is rated at 625 mW, with a gain-bandwidth product of 250 MHz. Operating temperatures range from -65 C to +150 C.

Feature Summary

  • PNP polarity configuration suitable for general-purpose switching and amplification tasks
  • Through-hole mounting style in a TO-92-3 case for standard PCB integration
  • High thermal stability supporting operation up to +150 C

Applications

  • General-purpose switching circuits
  • Amplifier stages
  • Low-power signal processing

Procurement Notes

Verify the specific suffix 'APM' against official datasheets to confirm packaging details, as standard listings may indicate bulk packaging. Ensure RoHS compliance documentation is obtained directly from the manufacturer or authorized distributor records. Cross-reference the part number with Central Semiconductor's current nomenclature to avoid discrepancies in ordering specifications.

Selection Notes

Select this component when a PNP BJT with moderate current handling and high voltage tolerance is required. The TO-92-3 package facilitates easy manual soldering and prototyping. Consider the 625 mW power dissipation limit and thermal management requirements for the specific application environment. Verify that the 40 V breakdown ratings align with the circuit's maximum operating voltages.

Part Context

This component belongs to the 2N53 series of discrete semiconductors manufactured by Central Semiconductor. The company specializes in a wide range of discrete devices including transistors, diodes, and thyristors. The 2N5366 variant represents a standard NPN/PNP complementary pair member often used in basic electronic designs requiring reliable switching performance.

FAQ

What is the maximum collector-emitter voltage for the 2N5366?

The maximum collector-emitter voltage (VCEO) is 40 V.

Is the 2N5366 available in a surface mount package?

No, the standard 2N5366 is housed in a TO-92-3 through-hole package.

What is the power dissipation rating?

The power dissipation (Pd) is rated at 625 mW.

2N5366 APM PBFREE2N5366 APM PBFREE
$0.32
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