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The Central Semiconductor Corp 2N5367 APM PBFREE is a silicon PNP epitaxial planar bipolar junction transistor (BJT) designed for general-purpose switching and amplifier applications. It features a maximum collector-emitter voltage of 40 V, a continuous collector current of 300 mA, and a transition frequency of 250 MHz. The device has a power dissipation rating of 625 mW and is housed in a TO-92-3 package.
Verify the specific ordering suffix to confirm lead-free status and packaging type. The APM designation indicates an ammo pack configuration, while other suffixes may denote tape-and-reel or bulk quantities. Ensure the selected variant matches the required assembly method and environmental compliance standards for the target production line.
Select this component when a PNP transistor with moderate voltage handling and low current capacity is required. The TO-92-3 package suits through-hole mounting in compact designs. Consider the 625 mW thermal limit and ensure adequate heat sinking if operating near maximum ratings in enclosed environments.
This part belongs to the Central Semiconductor 2N5366/2N5367 series of silicon PNP transistors. These devices are manufactured using epitaxial planar processes to ensure consistent electrical characteristics. The series is intended for use in consumer electronics and industrial control systems requiring standard discrete switching components.
Direct substitutes include the 2N5366, which shares similar PNP specifications within the same product family. Verify pinout compatibility and thermal resistance values before substituting with generic equivalents from other manufacturers.