2N5367 APM PBFREE

2N5367 APM PBFREE

$0.27
  • Description:40V 300MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:6e74fb77c640 Category: Brand:

  
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Product Detailed Parameters

  • Description:40V 300MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):300 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 30mA, 300mA
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 50mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5367 APM PBFREE

Overview

The Central Semiconductor Corp 2N5367 APM PBFREE is a silicon PNP epitaxial planar bipolar junction transistor (BJT) designed for general-purpose switching and amplifier applications. It features a maximum collector-emitter voltage of 40 V, a continuous collector current of 300 mA, and a transition frequency of 250 MHz. The device has a power dissipation rating of 625 mW and is housed in a TO-92-3 package.

Feature Summary

  • Utilizes silicon PNP epitaxial planar technology for reliable performance
  • Engineered for general-purpose switching and linear amplifier circuits
  • Provides high-frequency operation with a 250 MHz transition frequency

Applications

  • General-purpose signal amplification
  • Electronic circuit switching
  • Low-power analog processing

Procurement Notes

Verify the specific ordering suffix to confirm lead-free status and packaging type. The APM designation indicates an ammo pack configuration, while other suffixes may denote tape-and-reel or bulk quantities. Ensure the selected variant matches the required assembly method and environmental compliance standards for the target production line.

Selection Notes

Select this component when a PNP transistor with moderate voltage handling and low current capacity is required. The TO-92-3 package suits through-hole mounting in compact designs. Consider the 625 mW thermal limit and ensure adequate heat sinking if operating near maximum ratings in enclosed environments.

Part Context

This part belongs to the Central Semiconductor 2N5366/2N5367 series of silicon PNP transistors. These devices are manufactured using epitaxial planar processes to ensure consistent electrical characteristics. The series is intended for use in consumer electronics and industrial control systems requiring standard discrete switching components.

Replacement Considerations

Direct substitutes include the 2N5366, which shares similar PNP specifications within the same product family. Verify pinout compatibility and thermal resistance values before substituting with generic equivalents from other manufacturers.

2N5367 APM PBFREE2N5367 APM PBFREE
$0.27
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