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The Central Semiconductor 2N5367 is a PNP silicon epitaxial planar transistor designed for general-purpose switching and amplifier applications. It features a collector-base voltage (Vcbo) of 40V, a collector-emitter voltage (Vceo) of 4.0V, and an emitter-base voltage (Vebo) of 300mA. The device has a maximum power dissipation of 625mW and is available in a through-hole package. The TIN/LEAD suffix indicates tin-lead plated terminals for specific ordering requirements.
Verify the exact terminal plating requirement when ordering. The datasheet specifies that requesting Tin/Lead plated devices requires adding the suffix “TIN/LEAD” to the part number. Ensure the order matches the specific plating configuration needed for the application to avoid compatibility issues with assembly processes.
Select this component for low-voltage PNP switching or amplification roles where a 40V collector-base rating is sufficient. Consider the 625mW power dissipation limit and the specific Vceo of 4.0V when designing circuit topologies. Verify lead finish requirements against manufacturing standards before finalizing the bill of materials.
The 2N5367 belongs to the family of small-signal bipolar junction transistors manufactured by Central Semiconductor Corp. It shares design characteristics with the 2N5366 but differs in specific electrical ratings. This component serves as a discrete solution for analog signal processing and digital logic interfacing in electronic systems.
The 2N5366 is listed as a parametric equivalent in official documentation. Verify pinout compatibility and electrical limits before substitution. Ensure the replacement device meets the specific voltage and current requirements of the original circuit design.