2N5367 TIN/LEAD

2N5367 TIN/LEAD

$0.32
  • Description:40V 300MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:f6151de22f6e Category: Brand:

  
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Product Detailed Parameters

  • Description:40V 300MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):300 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 30mA, 300mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 50mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5367 TIN/LEAD

Overview

The Central Semiconductor 2N5367 is a PNP silicon epitaxial planar transistor designed for general-purpose switching and amplifier applications. It features a collector-base voltage (Vcbo) of 40V, a collector-emitter voltage (Vceo) of 4.0V, and an emitter-base voltage (Vebo) of 300mA. The device has a maximum power dissipation of 625mW and is available in a through-hole package. The TIN/LEAD suffix indicates tin-lead plated terminals for specific ordering requirements.

Feature Summary

  • PNP silicon epitaxial planar construction
  • Designed for general-purpose switching and amplifier applications
  • Through-hole packaging for standard mounting

Applications

  • General purpose consumer amplifier circuits
  • Industrial switching applications
  • Small signal amplification tasks

Procurement Notes

Verify the exact terminal plating requirement when ordering. The datasheet specifies that requesting Tin/Lead plated devices requires adding the suffix “TIN/LEAD” to the part number. Ensure the order matches the specific plating configuration needed for the application to avoid compatibility issues with assembly processes.

Selection Notes

Select this component for low-voltage PNP switching or amplification roles where a 40V collector-base rating is sufficient. Consider the 625mW power dissipation limit and the specific Vceo of 4.0V when designing circuit topologies. Verify lead finish requirements against manufacturing standards before finalizing the bill of materials.

Part Context

The 2N5367 belongs to the family of small-signal bipolar junction transistors manufactured by Central Semiconductor Corp. It shares design characteristics with the 2N5366 but differs in specific electrical ratings. This component serves as a discrete solution for analog signal processing and digital logic interfacing in electronic systems.

Replacement Considerations

The 2N5366 is listed as a parametric equivalent in official documentation. Verify pinout compatibility and electrical limits before substitution. Ensure the replacement device meets the specific voltage and current requirements of the original circuit design.

2N5367 TIN/LEAD2N5367 TIN/LEAD
$0.32
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