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The 2N5367 TRE PBFREE is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. The device features a maximum DC collector current of 300 mA and a collector-emitter voltage (VCEO) rating of 40 V. Additional electrical specifications include a collector-base voltage (VCBO) of 40 V, an emitter-base voltage (VEBO) of 4 V, and a collector-emitter saturation voltage of 1 V. Power dissipation is rated at 625 mW with a gain-bandwidth product (fT) of 250 MHz. The component operates within a temperature range of -65°C to +150°C.
Verify the specific ordering suffix against official manufacturer documentation to confirm lead times and packaging configurations. Ensure compliance with RoHS directives as indicated in the product data sheet. Confirm availability status directly with authorized distributors or the manufacturer prior to finalizing procurement plans.
Select this component for designs requiring a PNP transistor with moderate current handling capabilities. Verify that the required voltage ratings align with circuit operating conditions. Consider the TO-92-3 package constraints regarding thermal management and physical space requirements on the printed circuit board.
This part belongs to the 2N53 series of discrete semiconductors produced by Central Semiconductor Corp. The company specializes in manufacturing a variety of high-quality discrete semiconductor products, including transistors, diodes, and MOSFETs. This specific model represents a standard NPN/PNP BJT option within their broader portfolio of through-hole components.
Consult official substitution guides from Central Semiconductor Corp for verified equivalent part numbers. Cross-reference technical parameters such as voltage ratings, current limits, and package dimensions when evaluating alternative components.