2N5375 TRE TIN/LEAD

$0.20

Description：30V 500MA 360MW TH TRANSISTOR-SM
Series：-

SKU:6cfec6ff1083 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：30V 500MA 360MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
Transistor Type：PNP
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：300mV @ 15mA, 150mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 10V
Power - Max：360 mW
Frequency - Transition：150MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5375 TRE TIN/LEAD

Overview

The Central Semiconductor Corp 2N5375 TRE TIN/LEAD is an NPN Darlington transistor housed in a TO-92 package. It features a collector-emitter voltage of 40V, an emitter-base voltage of 12V, and a collector-base voltage of 40V. The device supports a continuous collector current of 500mA with a power dissipation rating of 625mW. It operates within a temperature range of -65°C to +150°C and includes a minimum DC current gain of 7000 at specified test conditions.

Feature Summary

High current amplification capability via integrated Darlington configuration
Robust thermal performance supporting extended operating temperatures up to 150°C
Lead-based plating option for specific soldering compatibility requirements

Applications

General-purpose switching circuits requiring high gain
Low-level signal amplification stages
Driver applications for relay or lamp loads

Procurement Notes

Verify the exact ordering suffix against the manufacturer's current documentation to ensure compliance with specific plating or packaging requirements. Confirm that the requested variant matches the intended application constraints regarding lead content and thermal ratings before finalizing procurement orders.

Selection Notes

Select this component when a high-gain NPN solution is required in a through-hole TO-92 package. Ensure the circuit design accommodates the 625mW power dissipation limit and the specific voltage ratings. Verify that the leaded plating option aligns with assembly process specifications and regulatory standards applicable to the final product.

Part Context

This part belongs to the 2N5375 series of NPN Darlington transistors manufactured by Central Semiconductor. It is designed for general-purpose amplification and switching tasks. The device utilizes silicon technology and is available in various packaging configurations depending on the specific suffix code selected during ordering.