2N5389

Overview

The Microchip Technology 2N5389 is a single NPN bipolar junction transistor designed for high-power applications. It features a maximum collector current of 7 A and a collector-emitter breakdown voltage of 300 V. The device supports a maximum power dissipation of 175 W, making it suitable for robust switching and amplification tasks. It utilizes a stud mount package configuration, specifically TO-61, which facilitates efficient thermal management and secure mechanical installation in industrial environments.

Feature Summary

• High power handling capability with 175 W dissipation rating
• Designed for high-current switching and amplification
• Stud mount construction for effective thermal transfer

Applications

• High-current switching circuits
• Power amplification stages
• Industrial control systems

Procurement Notes

Verify the specific manufacturer source, as the 2N5389 designation appears across multiple vendors including General Semiconductor and Semicoa. Confirm that the received component matches the Microchip Technology specification sheet regarding pinout and electrical ratings to ensure compatibility with existing designs.

Selection Notes

Select this component when a high-voltage NPN transistor with significant current capacity is required. The TO-61 stud mount package necessitates appropriate heatsinking infrastructure. Ensure the application environment supports the operating temperature range and that the mounting hardware aligns with the stud specifications.

Part Context

This part belongs to the category of single bipolar transistors (BJT). It is classified as a low-frequency silicon power transistor. The device is distinct from integrated circuits, serving as a discrete semiconductor component for power management within electronic systems.

Replacement Considerations

Cross-reference with other manufacturers offering the 2N5389 specification, such as General Semiconductor or Semicoa, to verify pin compatibility and thermal characteristics before substitution.