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Product Detailed Parameters
- Description：120V 600MA 625MW TH TRANSISTOR-S
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：120 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 50mA, 5V
- Power - Max：1.5 W
- Frequency - Transition：400MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5400 PBFREE is a silicon PNP epitaxial planar transistor designed for high voltage amplifier applications. It features a collector-base voltage of 130V and a collector-emitter voltage of 120V, with an emitter-base voltage rating of 5.0V. The device supports a maximum DC collector current of 600mA and dissipates up to 625mW of power. It offers a gain bandwidth product of 400MHz and operates within a temperature range of -65°C to +150°C. Packaged in a TO-92-3 through-hole configuration, it ensures reliable performance in demanding electronic circuits.
Feature Summary
- Engineered as a silicon PNP epitaxial planar transistor for robust high voltage amplification
- Provides significant voltage isolation with 130V collector-base and 120V collector-emitter ratings
- Delivers a transition frequency of 400MHz for effective signal processing capabilities
Applications
- High voltage amplifier circuits
- General purpose switching applications
- Signal conditioning stages requiring PNP topology
Procurement Notes
Verify the specific datasheet version for the 2N5400 PBFREE, as some sources cite 120V or 130V collector-base voltages. Confirm the TO-92-3 package type matches your PCB footprint requirements. Ensure the lead-free (PBFREE) designation aligns with your assembly process standards. Cross-reference the manufacturer's official documentation for precise thermal resistance values and absolute maximum ratings before finalizing the design.
Selection Notes
Select this component when a PNP transistor with high voltage handling is required for amplifier stages. The 600mA current capacity suits moderate load applications. Compare against the 2N5401 if higher collector-base voltage (160V) is needed. Consider the 400MHz bandwidth for frequency-sensitive designs. Ensure the through-hole mounting style fits the manufacturing constraints.
Part Context
This part belongs to the Central Semiconductor 2N5400 series of silicon PNP transistors. It is functionally similar to the 2N5401 but typically rated for slightly lower collector-base voltages. The series is designed for general-purpose and high-voltage amplifier uses. The PBFREE suffix indicates compliance with lead-free manufacturing standards.
Replacement Considerations
The 2N5401 is a direct functional substitute offering higher collector-base voltage (160V vs 130V). Verify that the replacement's voltage ratings exceed the original circuit requirements. Other generic PNP transistors may require re-evaluation of biasing networks due to varying hFE and saturation voltage characteristics.
