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The onsemi 2N5400_D26Z is a PNP silicon epitaxial planar transistor designed for general-purpose amplification and switching applications requiring high voltages. It operates in a TO-92 package with a maximum collector-emitter voltage of 120 V, a continuous collector current of 600 mA, and a total device dissipation of 625 mW at 25°C. The component features a collector-base breakdown voltage of 130 V and an emitter-base breakdown voltage of 5.0 V. It supports a junction temperature range from -55°C to +150°C, ensuring reliable operation across extreme thermal environments.
Verify the D26Z suffix corresponds to the specific Tape and Reel packaging configuration detailed in the official datasheet before procurement. Confirm that the component meets all absolute maximum ratings for your specific application environment. Ensure compliance with Fairchild Semiconductor's life support policy restrictions if deploying in critical systems.
Select this component when designing circuits that require a PNP transistor capable of handling 120 V collector-emitter voltage and 600 mA continuous current. Consider the TO-92 through-hole package constraints and the 625 mW power dissipation limit at ambient temperatures above 25°C. Evaluate the thermal resistance characteristics to ensure adequate heat management for your specific duty cycle requirements.
The 2N5400 series represents a standard family of small-signal PNP transistors widely utilized in electronic design. The 2N5400 variant specifically addresses applications demanding higher voltage tolerance compared to lower-rated counterparts. Manufactured by onsemi (formerly Fairchild Semiconductor), it maintains compatibility with established circuit topologies requiring reliable high-voltage switching capabilities.
Consult official cross-reference documentation for verified substitute part numbers. Ensure any replacement matches the original electrical parameters, including the 120 V collector-emitter voltage rating and TO-92 package dimensions.