2N5401 TIN/LEAD

$0.20

Description：TRANS PNP 150V 0.6A TO-92-3
Series：-

SKU:9fd0edb68698 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 150V 0.6A TO-92-3
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：300MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5401 TIN/LEAD

Overview

The Central Semiconductor 2N5401 TIN/LEAD is a silicon PNP bipolar junction transistor housed in a TO-92 through-hole package. It features a collector-emitter voltage of 150 V, a collector-base voltage of 160 V, and an emitter-base voltage of 5.0 V. The device supports a continuous collector current of 600 mA with a power dissipation of 625 mW at ambient temperature and 1.5 W at case temperature. Operating temperatures range from -65°C to +150°C.

Feature Summary

Designed for high voltage amplifier applications
Tin/Lead plating option available via specific ordering suffix
Suitable for harsh environment conditions

Applications

High voltage amplifier circuits
Low current precision circuits
Oscillators
Current mirror configurations

Procurement Notes

Verify the exact part number includes the TIN/LEAD suffix when ordering to ensure the correct lead finish specification. Confirm that the requested quantity aligns with manufacturer packaging requirements. Review the datasheet for thermal resistance values to ensure proper heat sinking if operating near maximum ratings. Check for any specific environmental compliance documentation required by your region.

Selection Notes

Select this component when a PNP transistor with high voltage capability is required. Ensure the application operates within the specified collector current and power dissipation limits. Consider the TO-92 package size for through-hole mounting constraints. Verify that the Tin/Lead plating meets regulatory or reliability requirements for the intended assembly process.

Part Context

This component belongs to the 2N5400/2N5401 series of silicon PNP transistors manufactured by Central Semiconductor Corp. The series is designed for general-purpose high voltage applications. The 2N5401 variant specifically offers higher voltage ratings compared to the 2N5400.

Replacement Considerations

Direct substitutes include other 2N5401 variants from different manufacturers such as onsemi (e.g., 2N5401YBU). Verify pinout compatibility and electrical parameters match before substitution.

FAQ

What is the difference between the 2N5401 and 2N5400?

The primary difference is the voltage rating. The 2N5401 has a collector-emitter voltage of 150 V and collector-base voltage of 160 V, while the 2N5400 has lower ratings of 120 V and 130 V respectively.