2N5401 TRE TIN/LEAD

Overview

The Central Semiconductor Corp 2N5401 TRE TIN/LEAD is a PNP silicon small-signal bipolar junction transistor (BJT) housed in a TO-92-3 through-hole package. It features a maximum collector-emitter voltage of 150 V and a collector-base voltage of 160 V, with an emitter-base voltage rating of 5 V. The device supports a continuous DC collector current of 600 mA and dissipates up to 1.5 W of power. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 1 mA and 10 V, a saturation voltage of 500 mV, and a transition frequency of 300 MHz. Operating temperatures range from -65 °C to +150 °C.

Feature Summary

• High-voltage capability suitable for demanding circuit environments
• Robust thermal performance with extended operating temperature range
• Hermetic sealing options available for radiation-hardened applications

Applications

• Low current precision circuits
• Preamplifier stages
• Oscillator configurations
• Current mirror setups

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm lead-free status and terminal plating composition. Ensure the selected variant matches the required package style and radiation hardness specifications if intended for harsh environment use. Cross-reference part numbers with official distributor catalogs to confirm availability and compliance with current environmental directives before finalizing procurement orders.

Selection Notes

Select this component when high voltage isolation and moderate current handling are required in a standard through-hole format. Consider the 1.5 W power dissipation limit for thermal management design. Evaluate the 300 MHz transition frequency for high-speed switching or amplification needs. Confirm that the PNP polarity aligns with the circuit topology requirements.

Part Context

This component belongs to the 2N5401 series of PNP bipolar transistors manufactured by Central Semiconductor. The series includes various packaging and termination options, such as tin/lead and lead-free variants, as well as hermetic packages for specialized applications. These transistors are designed for general-purpose small-signal applications requiring reliable performance across wide temperature ranges.

Replacement Considerations

Direct substitutes may include other PNP transistors with similar voltage and current ratings, such as the 2N5401HR for radiation-hardened requirements. Verify pinout compatibility and electrical parameters against the original datasheet before substitution.