SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 2N5401_D28Z is a PNP epitaxial silicon transistor housed in a TO-92 package. It supports a collector-emitter voltage of -150 V and a collector-base voltage of -160 V. The device handles a maximum collector current of -600 mA with a power dissipation rating of 625 mW at 25°C ambient temperature. Key electrical characteristics include a DC current gain ranging from 30 to 240, a transition frequency up to 400 MHz, and an output capacitance of 6 pF. Operating temperatures span from -55°C to +150°C junction temperature.
Verify the specific suffix against official documentation to confirm pinout configuration and packaging details. Ensure compatibility with existing circuit designs regarding thermal management and voltage ratings. Confirm RoHS compliance status if required by project specifications. Cross-reference datasheet revisions to ensure accurate parameter values are used during design validation.
Select this component for applications requiring high voltage handling and moderate current switching capabilities. Evaluate thermal constraints carefully due to the 625 mW dissipation limit. Consider the transition frequency when designing for higher speed signal processing. Verify that the TO-92 package fits within the mechanical enclosure constraints of the target assembly.
This part belongs to the 2N5401 series of PNP transistors originally developed by Fairchild Semiconductor, now managed by onsemi. The series is widely recognized for its reliability in general-purpose electronic circuits. The device serves as a fundamental building block for analog and digital switching designs across various industrial and consumer electronics sectors.
Consult official substitution lists for equivalent parts. Verify pinout compatibility before swapping components. Ensure replacement devices meet or exceed original voltage, current, and thermal specifications.