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The onsemi 2N5401G is a PNP amplifier transistor housed in a TO-92 package. It features a collector-emitter voltage of -150 V and a maximum collector current of -600 mA. The device dissipates up to 625 mW with a junction temperature range of -55°C to 150°C. Electrical characteristics include a DC current gain (hFE) ranging from 30 to 240 depending on the class, a transition frequency (fT) up to 400 MHz, and a noise figure of 8 dB.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm pinout configuration and packaging details. Ensure compliance with RoHS standards and check for any recent Fairchild Semiconductor integration updates regarding part nomenclature changes before finalizing procurement specifications.
Select this component for designs requiring high breakdown voltage and moderate current handling in a through-hole format. Evaluate the hFE class requirements based on the specific application's gain stability needs. Confirm thermal management capabilities align with the specified derating curve for the intended operating environment.
This device belongs to the 2N5401 series of bipolar junction transistors. Originally manufactured by Fairchild Semiconductor, it is now part of the ON Semiconductor portfolio following corporate integration. The component serves as a standard solution for general-purpose analog signal processing tasks within discrete semiconductor product lines.
Direct substitutes include the 2N5401YBU and 2N5401YTA variants offered by onsemi. Verify that alternative sources match the exact electrical parameters and physical dimensions required for the existing circuit layout.