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The onsemi 2N5401RL1 is a PNP silicon epitaxial planar amplifier transistor housed in a TO-92 package. It features a collector-emitter voltage of 150 Vdc and a continuous collector current of 600 mAdc. The device offers a minimum DC current gain of 50 at 1 mA and up to 240 at 50 mA. Thermal resistance from junction-to-ambient is 200 °C/W, with a maximum power dissipation of 625 mW at 25°C ambient temperature.
Verify the specific ordering suffix RL1 corresponds to the 2000-unit tape and reel packaging format as defined in the official datasheet. Confirm that the component meets RoHS compliance requirements if lead-free construction is necessary for the assembly process. Ensure the procurement documentation matches the exact part number to avoid discrepancies in package style or electrical tolerances.
Select this component when a PNP transistor requires a 150 V collector-emitter breakdown voltage and a 600 mA continuous current rating. The TO-92 through-hole package is suitable for standard prototyping and low-volume manufacturing. Consider the thermal resistance limits when designing heat dissipation strategies for high ambient temperatures.
This part belongs to the 2N5400/2N5401 family of PNP silicon transistors manufactured by Semiconductor Components Industries, LLC (onsemi). The 2N5401 variant specifically provides higher voltage ratings compared to the 2N5400. The RL1 suffix indicates a specific bulk packaging configuration within the broader product line.
Cross-reference with other manufacturers' 2N5401 equivalents such as those from KEC or Diotec. Verify pinout compatibility and ensure replacement parts meet the same 150 V and 600 mA specifications.