2N5401RL1

2N5401RL1

$0.07
  • Description:TRANS PNP 150V 0.6A TO92
  • Series:-

SKU:cab86b83b30e Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 150V 0.6A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92 (TO-226)
  • Grade:-
  • Qualification:-

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2N5401RL1

Overview

The onsemi 2N5401RL1 is a PNP silicon epitaxial planar amplifier transistor housed in a TO-92 package. It features a collector-emitter voltage of 150 Vdc and a continuous collector current of 600 mAdc. The device offers a minimum DC current gain of 50 at 1 mA and up to 240 at 50 mA. Thermal resistance from junction-to-ambient is 200 °C/W, with a maximum power dissipation of 625 mW at 25°C ambient temperature.

Feature Summary

  • High voltage capability for general-purpose amplification
  • Low leakage current characteristics
  • Low saturation voltage for efficient switching
  • Low noise figure suitable for sensitive signal applications

Applications

  • General purpose amplifier circuits
  • High voltage application stages
  • Resistor logic circuits
  • Relay switching drivers

Procurement Notes

Verify the specific ordering suffix RL1 corresponds to the 2000-unit tape and reel packaging format as defined in the official datasheet. Confirm that the component meets RoHS compliance requirements if lead-free construction is necessary for the assembly process. Ensure the procurement documentation matches the exact part number to avoid discrepancies in package style or electrical tolerances.

Selection Notes

Select this component when a PNP transistor requires a 150 V collector-emitter breakdown voltage and a 600 mA continuous current rating. The TO-92 through-hole package is suitable for standard prototyping and low-volume manufacturing. Consider the thermal resistance limits when designing heat dissipation strategies for high ambient temperatures.

Part Context

This part belongs to the 2N5400/2N5401 family of PNP silicon transistors manufactured by Semiconductor Components Industries, LLC (onsemi). The 2N5401 variant specifically provides higher voltage ratings compared to the 2N5400. The RL1 suffix indicates a specific bulk packaging configuration within the broader product line.

Replacement Considerations

Cross-reference with other manufacturers' 2N5401 equivalents such as those from KEC or Diotec. Verify pinout compatibility and ensure replacement parts meet the same 150 V and 600 mA specifications.

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