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The onsemi 2N5401RL1G is a PNP silicon amplifier transistor housed in a TO-92 package. It features a collector-emitter voltage of 150 Vdc and a continuous collector current of 600 mAdc. Total device dissipation reaches 625 mW at 25°C ambient temperature, with a thermal resistance junction-to-ambient of 200 °C/W. The transition frequency ranges from 100 to 400 MHz depending on the specific bin. Operating and storage junction temperatures span from -55°C to +150°C.
Verify the ordering suffix RL1G confirms tape and reel shipping configuration. Confirm Pb-Free status if required by assembly specifications. Ensure the component matches the preferred device designation within the 2N5400/2N5401 series documentation for optimal value and future availability considerations.
Select this component when a PNP bipolar junction transistor with high voltage ratings is required. The TO-92 through-hole package suits prototyping and low-volume manufacturing. Evaluate thermal management requirements against the 625 mW dissipation limit at ambient conditions versus case mounting scenarios.
This part belongs to the 2N5400/2N5401 family of PNP silicon amplifier transistors manufactured by onsemi. The 'RL1' suffix indicates a specific tape and reel packaging format containing 2000 units per reel. The 'G' suffix denotes lead-free compliance within the manufacturer's product line.
Public confirmed substitute: 2N5401YTA.