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The onsemi 2N5401RLRA is a PNP silicon amplifier transistor housed in a TO-92 package. It supports a maximum collector-emitter voltage of 150 Vdc and continuous collector current of 600 mAdc. Total device dissipation reaches 625 mW at 25°C ambient temperature, with a thermal resistance junction-to-ambient of 200 °C/W. The transition frequency ranges from 300 to 400 MHz depending on the specific bin. DC current gain varies between 30 and 60 based on operating conditions.
Verify the exact ordering suffix RLRA against the official datasheet to confirm tape and reel packaging specifications. Ensure compatibility with RoHS requirements if lead-free variants are necessary for the assembly process. Cross-reference the part number with the manufacturer's latest documentation to confirm current production status and availability constraints.
Select this component when a PNP bipolar junction transistor with high voltage ratings and moderate current handling is required. Consider the TO-92 through-hole package for standard prototyping or legacy board designs. Evaluate the thermal resistance and power dissipation limits relative to the expected operating environment to ensure reliable performance under load.
This device belongs to the 2N540x series of preferred PNP silicon amplifier transistors manufactured by onsemi. It shares electrical characteristics with the 2N5400 but offers higher voltage ratings. The series is designed for general-purpose amplification and switching tasks within the semiconductor components industry.
Direct substitutes include the 2N5401YBU and 2N5401NLBU. Verify pinout compatibility and electrical parameter alignment before implementation.