2N5401RLRM

$0.07

Description：TRANS PNP 150V 0.6A TO92
Series：-

SKU:fc70a42869e8 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 150V 0.6A TO92
Series：-
Mfr：onsemi
Package：Tape & Box (TB)
Transistor Type：PNP
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：300MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
Supplier Device Package：TO-92 (TO-226)
Grade：-
Qualification：-

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2N5401RLRM

Overview

The onsemi 2N5401RLRM is a discontinued PNP silicon small-signal transistor housed in a TO-92 (TO-226AA) through-hole package. It features a maximum collector-emitter voltage of 150 V and a continuous collector current of 600 mA. The device provides a DC current gain (hFE) ranging from 50 to 240 at specific test conditions, with a transition frequency (fT) between 100 MHz and 300 MHz. Total power dissipation is rated at 625 mW at 25°C ambient temperature. Operating junction temperatures span from -55°C to +150°C.

Feature Summary

PNP silicon construction for general-purpose amplification
High collector-emitter breakdown voltage capability
Low collector cutoff current specification
Through-hole mounting compatibility

Applications

Amplifier circuits
Switching applications
General-purpose signal processing

Procurement Notes

Verify component obsolescence status prior to design finalization. Confirm availability of alternative packaging or equivalent replacement devices from the manufacturer. Ensure procurement channels provide authentic components matching the specified datasheet parameters. Review environmental compliance documentation for legacy production runs.

Selection Notes

Select this component for designs requiring high-voltage PNP switching or amplification within standard through-hole constraints. Evaluate thermal management requirements against the 625 mW dissipation limit. Compare electrical characteristics such as hFE and fT against circuit requirements to ensure adequate performance margins under varying operating temperatures.

Part Context

This part belongs to the 2N5400/2N5401 family of preferred PNP silicon transistors manufactured by onsemi. The RL suffix indicates tape and reel or ammo box packaging variants. The device is designed for amplifier and switching applications, offering robust performance in harsh environments with wide operating temperature ranges.