2N5401RLRMG

Overview

The onsemi 2N5401RLRMG is a PNP silicon small-signal amplifier transistor housed in a TO-92 package. It features a collector-emitter voltage of 150 Vdc and a continuous collector current of 600 mAdc. The device operates within a junction temperature range of -55°C to +150°C, with a total device dissipation of 625 mW at 25°C ambient. Electrical characteristics include a DC current gain (hFE) ranging from 30 to 240 depending on bias conditions, and a transition frequency (fT) between 100 MHz and 400 MHz.

Feature Summary

• PNP silicon construction for general-purpose amplification
• High collector-emitter breakdown voltage capability
• Lead-free packaging available

Applications

• Amplifier circuits
• Switching applications

Procurement Notes

Verify the specific ordering suffix RLRMG against official documentation to confirm the tape and ammo box shipping configuration. Ensure the procurement matches the Pb-Free designation if required by assembly specifications. Cross-reference the manufacturer part number with the distributor listing to confirm exact component identity before finalizing orders.

Selection Notes

Select this component when a PNP transistor with a 150 V collector-emitter rating is required. Consider the 600 mA continuous current limit and 625 mW power dissipation constraints for thermal management. Verify that the TO-92 through-hole package fits the design footprint and that the hFE range meets the circuit's gain requirements.

Part Context

This component belongs to the 2N540x series of PNP silicon transistors manufactured by Semiconductor Components Industries, LLC (onsemi). The series includes variants like the 2N5400, differentiated primarily by their collector-emitter voltage ratings. The 2N5401 variant specifically provides higher voltage tolerance compared to its counterpart.

Replacement Considerations

Consult the datasheet for equivalent devices within the same family or other manufacturers offering identical electrical parameters and pin configurations.