2N5401ZL1

Overview

The onsemi 2N5401ZL1 is a PNP silicon amplifier transistor housed in a TO-92 package. It features a collector-emitter voltage of 150 Vdc and a continuous collector current of 600 mAdc. The device dissipates 625 mW at 25°C ambient temperature, with a thermal resistance junction-to-ambient of 200 °C/W. Operating temperatures range from -55°C to +150°C. DC current gain ranges from 30 to 240 depending on bias conditions, while the transition frequency reaches up to 400 MHz.

Feature Summary

• PNP silicon construction for amplifier applications
• High collector-emitter breakdown voltage capability
• Low noise figure performance
• Hermetic-style lead frame construction

Applications

• Amplifier circuits
• Switching applications
• General-purpose small-signal processing

Procurement Notes

Verify the specific ZL1 suffix against the official onsemi ordering table to confirm tape and ammo box packaging specifications. Ensure compatibility with RoHS requirements if the G suffix variant is required instead. Confirm that the TO-92 pinout matches the emitter-base-collector configuration defined in the datasheet before integration.

Selection Notes

Select this component when high voltage handling up to 150 V is required alongside moderate current capabilities. Consider the thermal resistance limits for ambient operating conditions. Evaluate the noise figure specifications if low-noise amplification is critical for the intended signal path design.

Part Context

This part belongs to the 2N5400/2N5401 series of preferred PNP silicon transistors manufactured by onsemi. The series is designed for general-purpose amplifier and switching uses. The ZL1 suffix specifically denotes the standard non-rohs version packaged in tape and ammo boxes.

Replacement Considerations

Direct substitutes include the 2N5401G (RoHS compliant) or other 2N5401 variants from different manufacturers sharing identical electrical ratings and TO-92 pinouts.