2N5415

Overview

The Microchip Technology 2N5415 is a single PNP bipolar junction transistor (BJT) designed for through-hole mounting in a TO-5-3 metal can package. It features a maximum collector-emitter voltage of 200 V and a continuous collector current rating of 1 A, with a power dissipation capacity of 1 W. The device supports an extended operating junction temperature range from -65°C to +200°C. Key electrical characteristics include a minimum DC current gain (hFE) of 15 and a maximum collector cutoff current of 50 µA. The emitter-base breakdown voltage is rated at 4 V, ensuring robust performance in high-voltage switching applications.

Feature Summary

• High voltage capability with 200 V collector-emitter breakdown
• Extended thermal stability supporting operation up to 200°C junction temperature
• Robust current handling with 1 A continuous collector current rating
• Hermetic metal can construction for reliable through-hole integration

Applications

• High-voltage switching circuits
• Power regulation systems
• Industrial control interfaces

Procurement Notes

Verify the specific revision level and lot traceability upon receipt, as this component may be subject to long lead times due to its specialized military-grade specifications. Confirm that the TO-5-3 package dimensions match your existing footprint requirements. Ensure proper handling procedures are followed to prevent electrostatic discharge damage during installation. Cross-reference the datasheet version to confirm compliance with current environmental regulations if required by your system design standards.

Selection Notes

Select the 2N5415 when a high-voltage PNP transistor with hermetic sealing is required for harsh environments. Its wide temperature range makes it suitable for aerospace or industrial applications where standard silicon devices might fail. Compare the 1 W power dissipation limit against your thermal management capabilities. Consider the TO-5-3 package constraints regarding PCB space and mounting hardware availability compared to surface-mount alternatives.

Part Context

This component belongs to Microchip's legacy discrete semiconductor portfolio, specifically within the bipolar transistor category. It serves as a ruggedized alternative to modern surface-mount devices, offering proven reliability in critical systems. The 2N5415 is often used in conjunction with other high-voltage components in power supplies and motor control circuits where long-term stability and radiation hardness are prioritized over miniaturization.

Replacement Considerations

The 2N5416U4 is a related variant but utilizes a different U4 surface-mount package. Direct pin-to-pin replacement is not possible without redesigning the PCB layout. Verify that any substitute maintains the same 200 V rating and PNP configuration to ensure circuit functionality remains unchanged.