2N5415 TIN/LEAD

Overview

The Central Semiconductor Corp 2N5415 TIN/LEAD is a single PNP bipolar junction transistor (BJT) designed for through-hole mounting in the TO-39 metal can package. It features a maximum collector-emitter voltage of 200 V and a continuous collector current of 1 A. The device dissipates up to 1 W of power and operates within a temperature range of -65°C to +200°C. Key electrical characteristics include a transition frequency of 15 MHz and a minimum DC current gain of 30 at 50 mA.

Feature Summary

• High-voltage capability with a 200 V collector-emitter breakdown rating suitable for demanding circuit environments.
• Robust thermal performance allowing operation at junction temperatures up to 200°C.
• Metal can construction provides mechanical stability and effective heat dissipation for high-power applications.

Applications

• High-voltage switching circuits
• Linear amplifier stages requiring high breakdown voltage
• Industrial control systems operating in extreme temperatures

Procurement Notes

Verify the specific plating suffix required, as tin/lead variants differ from lead-free options. Confirm availability directly with the manufacturer or authorized distributors, as stock levels fluctuate. Ensure the ordering documentation explicitly states the TIN/LEAD designation to avoid receiving RoHS-compliant equivalents that may have different material compositions.

Selection Notes

Select this component when a PNP transistor requires a 200 V rating and 1 A current capacity in a hermetic metal package. The TO-39 form factor is preferred for high-reliability applications where plastic packages are unsuitable. Consider the 15 MHz transition frequency for moderate-speed switching or amplification tasks.

Part Context

This part belongs to the standard discrete transistor family produced by Central Semiconductor Corp. It utilizes silicon technology and is housed in a TO-39 cylindrical metal case. The device is classified as a small-signal to medium-power BJT, distinct from high-frequency RF transistors or power MOSFETs.

Replacement Considerations

Cross-reference with other 2N5415 equivalents from different manufacturers. Verify pinout compatibility and ensure the substitute supports the TO-39 package style. Check if the alternative meets the 200 V and 1 A specifications without compromising the thermal resistance requirements.