2N5415

Overview

The STMicroelectronics 2N5415 is a high-voltage silicon epitaxial planar PNP transistor housed in a JEDEC TO-39 metal case. It features a collector-emitter voltage of -200 V and a continuous collector current of -1 A. The device provides a DC current gain (hFE) ranging from 30 to 150 at Ic = -50 mA, with a maximum total dissipation of 10 W at Tc ≤ 25°C. Thermal resistance junction-to-case is 17.5°C/W, supporting operation within a storage temperature range of -65°C to 200°C.

Feature Summary

• High-voltage capability designed for robust line-operated applications
• Epitaxial planar construction ensuring stable performance
• Metal package providing effective thermal management

Applications

• Drivers in high-voltage low-current inverters
• Switching circuits in industrial equipment
• Series regulators for consumer and industrial line-operated systems

Procurement Notes

Verify the specific manufacturer source when ordering, as the 2N5415 designation is utilized by multiple semiconductor producers including NXP and Microchip. Confirm that the component matches the STMicroelectronics datasheet specifications, particularly the TO-39 metal package dimensions and electrical characteristics, to ensure compatibility with existing designs.

Selection Notes

Select this component for applications requiring high voltage isolation and moderate current handling in a hermetic metal package. Consider the thermal resistance limits and power dissipation requirements relative to the operating environment. Ensure the design accounts for the specific hFE variations and saturation voltages defined in the official STMicroelectronics documentation.

Part Context

This part belongs to the family of high-voltage silicon PNP transistors intended for demanding environments. It complements other line-operated components by offering reliable switching and amplification capabilities. The TO-39 packaging distinguishes it from surface-mount alternatives, catering to legacy or high-reliability through-hole designs.

Replacement Considerations

Cross-reference with equivalent high-voltage PNP transistors in TO-39 packages. Verify pinout compatibility and ensure that alternative parts meet or exceed the -200 V collector-emitter voltage and -1 A current ratings specified for the 2N5415.