2N5415S

Overview

The Microchip Technology 2N5415S is a single PNP bipolar junction transistor (BJT) designed for power applications. It utilizes silicon technology and is housed in a TO-205AD-3 metal can package for through-hole mounting. The device supports a maximum DC collector current of 1 A and withstands a collector-emitter voltage (VCEO) of 200 V, with a collector-base voltage (VCBO) also rated at 200 V. The emitter-base voltage (VEBO) is limited to 6 V. Power dissipation is specified at 750 mW. The component operates within a temperature range of -65°C to +200°C. DC current gain (hFE) ranges from a minimum of 30 to a maximum of 120 at 50 mA and 10 V.

Feature Summary

• High voltage capability with 200 V collector-emitter breakdown rating suitable for demanding power circuits.
• Extended thermal performance allowing operation up to a junction temperature of 200°C.
• Robust mechanical construction using a hermetically sealed TO-205AD-3 metal can package.

Applications

• High-voltage switching circuits
• Power amplifier stages
• Industrial control systems

Procurement Notes

Verify the specific ordering suffix and manufacturer lot codes against official Microchip documentation before procurement. Confirm RoHS compliance status as indicated in the datasheet, noting that this specific part may not meet standard environmental directives. Ensure the supplier provides valid traceability records for the TO-205AD-3 package type to guarantee authenticity and correct pinout alignment.

Selection Notes

Select the 2N5415S when a high-voltage PNP transistor with significant current handling is required in a through-hole configuration. Consider the 200 V rating and 1 A continuous current capacity for robust power management tasks. Evaluate the thermal requirements carefully due to the 750 mW dissipation limit and the need for adequate heat sinking or airflow to maintain safe operating temperatures within the specified range.

Part Context

This component belongs to the family of discrete bipolar transistors manufactured by Microchip Technology. It serves as a fundamental active element in electronic circuit design, specifically tailored for applications requiring reliable high-voltage switching and amplification. The TO-205AD-3 package indicates a legacy form factor often used in ruggedized or aerospace-grade electronics where mechanical durability is prioritized.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with alternative PNP transistors having similar voltage and current ratings only after consulting official cross-reference guides.

FAQ

What is the maximum collector-emitter voltage for the 2N5415S?

The maximum collector-emitter voltage (VCEO) is 200 V.

Does the 2N5415S support surface mount installation?

No, the 2N5415S is designed for through-hole mounting in a TO-205AD-3 metal can package.

What is the operating temperature range of this transistor?

The device operates within a temperature range of -65°C to +200°C.