2N5416

Overview

The STMicroelectronics 2N5416 is a high-voltage silicon epitaxial planar PNP transistor housed in a JEDEC TO-39 metal case. It is designed for consumer and industrial line-operated applications, functioning as a driver in high-voltage low-current inverters, switching circuits, and series regulators. The device supports a collector-base voltage of -350 V and a collector-emitter voltage of -300 V. It handles a maximum collector current of -1 A with total dissipation rated at 10 W at Tc ≤ 25°C or 1 W at Tamb ≤ 50°C. Key electrical characteristics include a collector cut-off current of -50 μA, DC current gain (hFE) ranging from 30 to 120, and a transition frequency of 15 MHz.

Feature Summary

• High-voltage capability suitable for demanding line-operated environments
• Robust thermal performance with defined junction-to-case resistance
• Designed specifically for use as drivers in high-voltage low-current inverters

Applications

• Drivers in high-voltage low-current inverters
• Switching circuits
• Series regulators

Procurement Notes

Verify the specific part number against official STMicroelectronics documentation to confirm compliance with the provided specifications. Ensure that the procurement channel provides authentic components matching the TO-39 package and electrical ratings. Cross-reference the datasheet details regarding absolute maximum ratings and thermal data to validate suitability for the intended application environment before finalizing orders.

Selection Notes

Select the 2N5416 when high-voltage operation up to -350 V is required in a robust metal package. Consider its thermal characteristics, specifically the 17.5 °C/W junction-to-case resistance, for heat management in series regulator or inverter designs. Evaluate the DC current gain range and transition frequency to ensure compatibility with the required switching speeds and amplification needs within the target circuit topology.

Part Context

The 2N5416 belongs to a family of high-voltage silicon PNP transistors manufactured by STMicroelectronics. It shares design similarities with the 2N5415 but offers higher voltage ratings, specifically a collector-base voltage of -350 V compared to -200 V for the 2N5415. Both devices utilize the same TO-39 metal case and are optimized for line-operated applications requiring reliable performance in industrial and consumer electronics.

Replacement Considerations

The 2N5415 is a related component within the same product family but features lower voltage ratings (-200 V VCBO/VCEO). Substitution requires verifying that the reduced voltage limits do not compromise circuit safety. No other direct substitute part numbers are confirmed in the provided documentation.