2N5416S

$25.12

Description：TRANS PNP 300V 1A TO39
Series：-

SKU:9511f5b017b9 Category: Single Bipolar Transistors Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 300V 1A TO39
Series：-
Mfr：Microchip Technology
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：300 V
Vce Saturation (Max) @ Ib, Ic：2V @ 5mA, 50mA
Current - Collector Cutoff (Max)：50µA
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 50mA, 10V
Power - Max：750 mW
Frequency - Transition：-
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-205AD, TO-39-3 Metal Can
Supplier Device Package：TO-39 (TO-205AD)
Grade：-
Qualification：-

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2N5416S

Overview

The Microchip Technology 2N5416S is a silicon PNP power bipolar junction transistor (BJT) designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 80 V and a collector-base voltage rating of 350 V, with an emitter-base voltage limit of 6 V. The device supports a maximum continuous DC collector current of 1 A and dissipates up to 1 W of power. It operates within a temperature range of -65 °C to +200 °C junction temperature. The component utilizes a surface-mount SMD-0.22-3 package configuration.

Feature Summary

High voltage capability with a 350 V collector-base breakdown rating suitable for demanding power environments
Extended thermal stability allowing operation at junction temperatures up to 200 °C
Robust single PNP configuration optimized for high-current switching tasks

Applications

High-voltage power switching circuits
Industrial control systems requiring robust transistor performance
Power supply output stages

Procurement Notes

Verify the specific suffix 'S' against official Microchip documentation to confirm package type and electrical tolerances, as datasheets may list variants like U4 or standard TO-5 packages. Confirm RoHS compliance status directly from the manufacturer's latest release notes, as historical data indicates non-compliance for some versions. Ensure the ordering part number matches the required surface-mount footprint specifications.

Selection Notes

Select this component when a PNP transistor with high collector-base voltage isolation is required alongside moderate collector current handling. Compare the 80 V collector-emitter rating against circuit requirements to ensure adequate headroom. Evaluate the 1 W power dissipation limit relative to thermal management capabilities in the target application environment.

Part Context

This component belongs to the Microchip 2N5416 series of power BJTs. It shares core electrical characteristics with other variants such as the 2N5416U4, differing primarily in packaging and mounting style. The series is engineered for reliability in industrial and commercial power electronics applications requiring stable high-voltage operation.