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Product Detailed Parameters
- Description：25V 200MA 625MW TH TRANSISTOR-SM
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Box (TB)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：200 mA
- Voltage - Collector Emitter Breakdown (Max)：25 V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 50mA, 5V
- Power - Max：625 mW
- Frequency - Transition：100MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5447 APM TIN/LEAD is a P-Channel Enhancement Mode Field Effect Transistor (FET) designed for general-purpose switching and amplification applications. The device utilizes an axial leaded package configuration, specifically the DO-201AA form factor, which facilitates through-hole mounting on printed circuit boards. This component operates as a voltage-controlled switch, where the conductivity between the drain and source terminals is regulated by the gate-to-source voltage. The part number suffix indicates specific terminal plating characteristics relevant to soldering processes.
Feature Summary
- P-Channel enhancement mode operation for voltage-controlled switching
- Axial leaded construction for reliable board mounting
- Silicon semiconductor material for stable performance
Applications
- General purpose electronic switching circuits
- Amplifier stages requiring P-channel topology
- Power management control interfaces
Procurement Notes
Verify the exact electrical parameters against the manufacturer's official datasheet before integration. Confirm that the tin/lead terminal finish meets the environmental compliance requirements of the target assembly process. Ensure the axial lead spacing matches the PCB footprint design specifications to prevent mechanical stress during installation.
Selection Notes
Select this component when a discrete P-channel FET with axial leads is required for high-reliability through-hole applications. Consider the thermal dissipation capabilities inherent to the DO-201AA package size. Evaluate the gate threshold voltage requirements against the driving logic levels available in the system architecture to ensure proper turn-on and turn-off characteristics.
Part Context
This device belongs to the family of discrete silicon N-channel and P-channel field effect transistors manufactured by Central Semiconductor Corp. These components are engineered for robust performance in industrial and commercial electronics. The axial leaded format distinguishes it from surface-mount alternatives, offering specific mechanical advantages for legacy or high-vibration environments.
Replacement Considerations
Consult the manufacturer's cross-reference documentation for verified equivalent part numbers. Ensure any substitute maintains identical pinout configurations and package dimensions to guarantee mechanical compatibility without modifying the existing circuit board layout.
