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Product Detailed Parameters
- Description：25V 200MA 625MW TH TRANSISTOR-SM
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：200 mA
- Voltage - Collector Emitter Breakdown (Max)：25 V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 50mA, 5V
- Power - Max：625 mW
- Frequency - Transition：100MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5447 TRE TIN/LEAD is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in TO-92-3 packages. It features a collector-emitter voltage of 25 V, a continuous collector current of 200 mA, and a power dissipation rating of 625 mW. The device operates with a transition frequency of 100 MHz and utilizes silicon technology.
Feature Summary
- PNP polarity configuration suitable for general-purpose switching and amplification applications
- Through-hole installation capability within the standard TO-92-3 package format
- Silicon-based semiconductor construction ensuring reliable operational performance
Applications
- General-purpose signal amplification circuits
- Electronic switching applications requiring low voltage operation
- Audio processing stages utilizing small-signal transistors
Procurement Notes
Verify that the specific ordering suffix matches the required lead-free or tin/lead composition as indicated by the part number designation. Confirm the packaging type aligns with production requirements, noting that this variant may be supplied in tape and reel formats distinct from bulk options. Ensure compatibility with existing assembly processes regarding component handling and soldering profiles.
Selection Notes
Select this component when a PNP transistor with a 25 V collector-emitter breakdown voltage is required. The 200 mA current rating and 625 mW power dissipation define its thermal and electrical limits. Consider the 100 MHz transition frequency for high-speed switching needs compared to lower-frequency alternatives within the same package family.
Part Context
This part belongs to the Central Semiconductor 2N5447 series of small-signal NPN and PNP transistors. These devices are commonly utilized in consumer electronics and industrial control systems where compact, reliable switching elements are necessary. The TO-92-3 package provides a cost-effective solution for high-volume manufacturing applications.
Replacement Considerations
Direct substitutes include other manufacturers' equivalents meeting the 2N5447 specification. Verify pinout compatibility and electrical parameters such as VCEO and IC before substitution. Cross-reference datasheets to ensure thermal characteristics match the original design constraints.
