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Product Detailed Parameters
- Description：JFET N-CH 25V TO92-3
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：1 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：500 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：7pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：310 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5457 is a silicon N-channel Junction Field-Effect Transistor (JFET) designed for switching and amplifier applications. It operates within a Drain-Source Voltage (VDS) of 25 V, Drain-Gate Voltage (VDG) of 25 V, and Gate-Source Voltage (VGS) of 25 V. The device supports a continuous gate current of 10 mA and dissipates up to 310 mW of power. It functions across an operating and storage junction temperature range of -65°C to +150°C. Electrical characteristics include a maximum reverse gate leakage current (IGSS) of 1.0 nA at 15 V and a typical drain-source on-current (IDSS) ranging from 1.0 mA to 5.0 mA at 15 V.
Feature Summary
- Silicon N-channel JFET construction optimized for switching and linear amplifier circuits
- High input impedance with low reverse gate leakage current specifications
- Robust thermal performance supporting operation up to +150°C junction temperature
- Standard TO-92 through-hole package configuration
Applications
- General-purpose signal amplification stages
- Electronic switching circuits
- Low-noise pre-amplifier designs
Procurement Notes
Verify the specific ordering suffix when purchasing. Add "TIN/LEAD" for tin/lead plating or "PBFREE" for lead-free plating options. Confirm package type matches the required TO-92 form factor. Ensure environmental compliance requirements align with the selected plating variant. Contact Central Semiconductor support for custom screening or specific electrical curve requests.
Selection Notes
Select the 2N5457 based on its N-channel configuration and 25 V voltage ratings. Compare IDSS ranges against circuit biasing requirements. Consider the TO-92 package for through-hole mounting constraints. Evaluate thermal dissipation limits relative to ambient operating conditions. Verify compatibility with existing PCB layouts requiring standard three-pin transistor footprints.
Part Context
The 2N5457 belongs to a family of silicon N-channel JFETs manufactured by Central Semiconductor Corp, alongside the 2N5458 and 2N5459 variants. These components share identical physical packaging and basic structural design but differ in specific electrical parameter tolerances such as drain current and transconductance. This grouping allows designers to select precise gain and leakage characteristics while maintaining consistent mechanical integration.
Replacement Considerations
Cross-reference with other N-channel JFETs offering similar 25 V ratings and TO-92 packages. Verify pinout compatibility, specifically Drain-Source-Gate alignment. Check if alternative devices meet the required IDSS and VGS(OFF) specifications for the target application.
