2N5458_D26Z

2N5458_D26Z

$0.05
  • Description:JFET N-CH 25V TO92-3
  • Series:-

SKU:f3b6d84bb99e Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-CH 25V TO92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):25 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):2 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:1 V @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds:7pF @ 15V
  • Resistance - RDS(On):-
  • Power - Max:625 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5458_D26Z

Overview

The 2N5458_D26Z is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It operates with a maximum drain-source voltage of 25 V and a gate-source voltage limit of 25 V. The device features a typical drain current of 2 mA at 15 V and a maximum power dissipation of 310 mW. Input capacitance is specified at 7 pF when measured at 15 V, while the feedback capacitance reaches a maximum of 10 pF. The unit is housed in a TO-92 package and supports junction temperatures up to 150 °C.

Feature Summary

  • Utilizes N-channel JFET technology for signal amplification
  • Designed for low-noise analog circuit applications
  • Features high input impedance characteristics

Applications

  • Low-noise preamplifier stages
  • Analog switch circuits
  • High-impedance buffer configurations

Procurement Notes

Verify the specific D26Z suffix against official onsemi documentation to confirm packaging details and compliance status. Ensure the component matches the required TO-92 form factor and electrical ratings for the intended design. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring N-channel JFETs with a 25 V breakdown rating. Consider the 310 mW power dissipation limit and TO-92 thermal constraints during layout. Verify that the 2 mA typical drain current aligns with the biasing requirements of the target application circuit.

Part Context

This part belongs to the standard 2N5458 family of N-channel JFETs. The D26Z suffix typically indicates a specific tape-and-reel or bulk packaging variant distributed by onsemi. It serves as a direct replacement for generic 2N5458 devices in existing schematics requiring identical electrical performance.

Replacement Considerations

Direct substitutes include the 2N5458G from onsemi and the 2N5458 from Central Semiconductor. Verify pinout compatibility and ensure the alternative manufacturer's datasheet confirms matching Vgs(off) and Idss parameters.

2N5458_D26Z2N5458_D26Z
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