2N5460

Overview

The 2N5460 is a P-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It operates in depletion mode and is designed for low-level audio and general-purpose applications involving high-impedance signal sources. The device utilizes silicon technology and is housed in a TO-92-3 (TO-226AA) through-hole package. Key electrical characteristics include a maximum drain-source breakdown voltage of -25 V, a gate-source cutoff voltage ranging from -0.5 V to -6 V, and a typical forward transconductance of 1500 µS at VDS = -10 V and ID = -1 mA. The component supports a continuous drain current of up to 10 mA and features a maximum feedback capacitance of 3 pF.

Feature Summary

• P-channel JFET construction optimized for high-impedance signal source interfacing
• Depletion mode operation suitable for low-level audio amplification
• Low feedback capacitance design supporting general-purpose signal processing

Applications

• Low-level audio amplifier circuits
• General-purpose signal conditioning with high-impedance sources
• Analog switching and modulation applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and compliance status. Ensure the procurement channel provides documentation confirming the component originates from authorized manufacturing lines. Cross-reference the part number with the latest revision history to avoid obsolete or discontinued variants during sourcing.

Selection Notes

Select this component when designing circuits requiring a P-channel JFET for high-impedance input stages. Confirm that the required drain-source voltage rating exceeds the maximum circuit potential. Verify that the gate-source cutoff voltage range accommodates the intended biasing conditions. Ensure the thermal management strategy aligns with the specified power dissipation limits in the target application environment.

Part Context

The 2N5460 belongs to the standard 2N54xx series of junction field-effect transistors produced by onsemi. This series includes complementary N-channel and P-channel devices intended for general-purpose analog applications. The component represents a legacy silicon technology offering widely used in established electronic designs requiring reliable depletion-mode FET performance.

Replacement Considerations

Direct replacements include the 2N5461 (N-channel counterpart) or equivalent P-channel JFETs such as the MPF102 if pinout compatibility is verified. Substitute parts must match the TO-92 package dimensions and meet or exceed the -25 V breakdown voltage and 10 mA current ratings specified in the original datasheet.