2N5485_D26Z

Overview

The 2N5485_D26Z is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It features a maximum drain-source voltage of 25 V and a continuous drain current of 10 mA. The device operates in depletion mode with a gate-source cutoff voltage of -7 V. It is housed in a TO-92 package with three pins, suitable for through-hole mounting. The component has a power dissipation rating of 310 mW at 25°C ambient temperature and supports a maximum junction temperature of 150 °C.

Feature Summary

• N-channel JFET technology designed for RF small-signal applications
• Low feedback capacitance supporting high-frequency operation up to 400 MHz
• Enhanced thermal stability with a maximum operating junction temperature of 150 °C

Applications

• RF amplifier circuits requiring low noise and high frequency response
• Small-signal switching and analog modulation stages
• High-frequency oscillator configurations

Procurement Notes

Verify the specific suffix _D26Z against official manufacturer documentation to confirm packaging details, as standard part numbers may vary in reel or tape specifications. Confirm RoHS compliance status directly with the supplier, as legacy components may have different environmental declarations depending on the production batch and date code.

Selection Notes

Select this component when designing circuits that require an N-channel JFET with a 25 V breakdown voltage and moderate current handling capabilities. Ensure the application stays within the 310 mW power dissipation limit and does not exceed the 400 MHz frequency range. Verify that the TO-92 package dimensions fit the available PCB real estate and that the depletion mode operation aligns with the circuit biasing requirements.

Part Context

This component belongs to the 2N5485 series of N-channel JFETs from onsemi. It is functionally similar to other industry-standard JFETs like the 2N5484 and 2N5486, which share comparable pinouts and electrical characteristics but may differ slightly in gain bandwidth or leakage currents. The D26Z suffix typically indicates a specific packaging variant, such as ammo pack or tape and reel, rather than a change in the semiconductor die characteristics.

Replacement Considerations

Direct substitutes include the 2N5484 and 2N5486, which share the same N-channel JFET configuration and TO-92 package. Verify that the replacement's gate-source cutoff voltage and transconductance parameters meet the original design specifications before implementation.