SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 2N5485_D27Z is an N-channel Junction Field-Effect Transistor (JFET) designed for RF and analog switching applications. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. Key electrical parameters include a gate-source breakdown voltage of -25 V, a continuous drain current of 10 mA, and a power dissipation rating of 350 mW. The device operates within a temperature range of -55°C to +150°C and features a forward transconductance ranging from 0.0035 S to 0.007 S.
Verify the specific suffix _D27Z against official manufacturer documentation to confirm packaging and handling specifications. Confirm availability status as related variants may be obsolete or restricted. Ensure compliance with RoHS directives by checking the detailed certification data provided in the component datasheet before procurement.
Select this component when an N-channel JFET with a -25 V gate-source breakdown voltage and 10 mA continuous drain current is required. Consider the TO-92-3 package for through-hole mounting constraints. Verify that the specified transconductance range meets the circuit's gain requirements and that the operating temperature range aligns with the environmental conditions.
This part belongs to the 2N5485 series of N-channel RF amplifiers and JFETs manufactured by onsemi. These devices are derived from Process 50 technology and are primarily intended for electronic switch applications requiring low on-resistance. The series includes variants such as MMBF5484, MMBF5485, and MMBF5486, which share similar electrical characteristics but differ in cutoff voltage ranges and packaging options.
Publicly confirmed substitute part numbers for the 2N5485_D27Z were not identified in the available verified documentation.