SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 2N5485_D75Z is an N-channel Junction Field-Effect Transistor (JFET) designed for RF applications. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. Key electrical parameters include a maximum drain-source voltage of 25 V, a continuous drain current of 10 mA, and a power dissipation rating of 350 mW. The device operates within a temperature range of -55°C to +150°C. Its forward transconductance ranges from 0.0035 S to 0.007 S, with a gate-source breakdown voltage of -25 V.
This component is listed as obsolete by the manufacturer. Availability is restricted, and distributors may not stock this item in all regions. Verification of current lifecycle status and sourcing channels is required before procurement planning. Cross-reference with equivalent legacy parts is recommended due to discontinuation.
Select this part for N-channel JFET requirements in RF designs needing low voltage operation. Ensure the design accommodates the TO-92-3 package constraints and thermal limits. Verify that the specific transconductance range meets the circuit's gain specifications. Consider the obsolete status when designing for long-term production runs.
The 2N5485 series represents a standard N-channel JFET family historically used in analog and RF electronics. The _D75Z suffix typically denotes specific packaging or tape-and-reel variations within the onsemi portfolio. This component belongs to the broader category of small-signal field-effect transistors used for impedance matching and amplification.
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, engineers should consult official replacement guides or evaluate generic N-channel JFETs with matching Vgs and Id ratings.