ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：2V 6V 10MA 310MW TH JFET N CHANN
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：8 mA @ 15 V
- Current Drain (Id) - Max：30 mA
- Voltage - Cutoff (VGS off) @ Id：6 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：310 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
Download product information
Overview
The Central Semiconductor Corp 2N5486 TIN/LEAD is a silicon N-channel Junction Field-Effect Transistor (JFET) designed for RF small-signal applications. It utilizes a TO-92 (TO-226AA) through-hole package with three terminals. Key electrical specifications include a maximum drain-source voltage of 25V and a continuous drain current of 30mA. The device operates in depletion mode with a typical noise figure of 4dB at 4mA drain current. It supports an ultra-high frequency band operation up to 400MHz, featuring a maximum feedback capacitance of 1pF. The component is rated for junction temperatures ranging from -65°C to 150°C.
Feature Summary
- Optimized for high-frequency RF amplification circuits
- Low noise performance suitable for sensitive signal processing
- Robust plastic encapsulation for through-hole mounting
Applications
- RF small-signal amplifier stages
- Ultra-high frequency signal processing
- Low-noise front-end circuitry
Procurement Notes
Verify the specific ordering suffix ensures lead-free compliance if required by assembly standards. Confirm the tin/lead variant matches legacy soldering processes or regulatory exemptions. Cross-reference the manufacturer part number against official datasheets to ensure pinout compatibility and absolute maximum ratings align with design requirements before integration.
Selection Notes
Select this component when designing circuits requiring low-noise N-channel JFET characteristics in the UHF range. Ensure the application voltage remains below the 25V drain-gate limit. Verify that the TO-92 package dimensions fit the PCB layout constraints. Consider the 30mA current limit for biasing networks and load matching calculations.
Part Context
This part belongs to the Central Semiconductor discrete transistor portfolio, specifically within the JFET category. It serves as a specialized semiconductor device for analog and RF engineering tasks. The 2N5486 designation follows standard JEDEC numbering conventions for N-channel JFETs, distinguishing it from bipolar transistors or MOSFETs within the same manufacturer lineup.
Replacement Considerations
- 2N5485
- 2N5487
FAQ
What is the maximum operating frequency for the 2N5486?
The device is specified for operation in the Ultra High Frequency band, with a transition frequency capability up to 400MHz.
What is the package type for this component?
The 2N5486 is housed in a TO-92 (also known as TO-226AA) three-terminal plastic through-hole package.
Is the 2N5486 enhancement or depletion mode?
The 2N5486 is a depletion mode device, meaning it conducts current between the drain and source when the gate-source voltage is zero.
