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The onsemi 2N5486 is an N-channel silicon Junction Field-Effect Transistor (JFET) designed for RF small-signal applications. It operates in depletion mode and is housed in a TO-226AA (TO-92) package with three terminals. Key electrical ratings include a maximum drain-gate voltage of 25V, a source-gate voltage of 25V, and a continuous drain current of 30mA. The device features a low feedback capacitance of 1pF, supporting ultra-high frequency band operations. It functions within a junction temperature range of -55°C to +150°C.
Verify the specific manufacturer origin when sourcing this component, as the 2N5486 designation is utilized by multiple semiconductor producers including onsemi and Microchip. Confirm that the received unit matches the required pinout and electrical characteristics from the specific datasheet provided by the supplier. Ensure compliance with project material restrictions if lead-free variants are mandated.
Select the 2N5486 for circuits requiring N-channel JFET behavior at ultra-high frequencies. Its 30mA drain current limit and 25V voltage ratings define its operational envelope. Consider the thermal resistance of 556°C/W for SOT-23 equivalents if comparing form factors, though the TO-92 package offers different thermal handling. Validate gate-source cutoff voltage ranges against specific circuit biasing requirements.
This component belongs to the family of N-channel RF amplifiers, often grouped with MMBF5484 and MMBF5485. While these devices share similar process technologies and packaging styles, they differ in gate-source cutoff voltage and zero-gate voltage drain current specifications. The 2N5486 specifically targets applications needing distinct depletion-mode characteristics within the ultra-high frequency band.
MMBF5484 and MMBF5485 are functionally related N-channel JFETs from the same product family. Substitution requires verifying that the alternative's gate-source cutoff voltage and drain current parameters align with the original circuit design constraints.