2N5550 TRE PBFREE

Overview

The Central Semiconductor Corp 2N5550 TRE PBFREE is an NPN silicon epitaxial planar transistor housed in a TO-92-3 through-hole package. It features a maximum collector-emitter voltage of 140 V and a continuous collector current of 600 mA. The device offers a transition frequency of 300 MHz and a power dissipation rating of 625 mW. It operates within a junction temperature range of -65°C to +150°C.

Feature Summary

• Utilizes silicon epitaxial planar technology for stable performance
• Designed for high-voltage switching and amplification applications
• Provides high transition frequency suitable for RF circuits

Applications

• High-voltage amplifier stages
• General-purpose switching circuits
• RF signal processing

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm lead times and packaging configurations. Ensure compatibility with RoHS directives if required by your supply chain standards. Cross-reference datasheet electrical limits with your circuit design requirements before finalizing procurement decisions.

Selection Notes

Select this component when a high-voltage NPN transistor with moderate current handling is required. The 140 V breakdown voltage distinguishes it from standard low-voltage alternatives. Consider the TO-92-3 package constraints for thermal management in enclosed designs compared to higher-power packages.

Part Context

This part belongs to the 2N5550 family of NPN transistors manufactured by Central Semiconductor. It serves as a general-purpose high-voltage device often used in consumer electronics and industrial control systems where reliable switching and amplification are necessary under moderate load conditions.

Replacement Considerations

Public confirmed substitute part numbers: 2N5550/D26Z.