2N5550 TRE TIN/LEAD

2N5550 TRE TIN/LEAD

$0.16
  • Description:140V 600MA 625MW TH TRANSISTOR-S
  • Series:-

SKU:39a38cd0c0e9 Category: Brand:

  
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Product Detailed Parameters

  • Description:140V 600MA 625MW TH TRANSISTOR-S
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):140 V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 2.5A, 4V
  • Power - Max:625 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5550 TRE TIN/LEAD

Overview

The Central Semiconductor Corp 2N5550 TRE TIN/LEAD is a silicon NPN small signal bipolar junction transistor designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 140V, a continuous collector current of 0.6A, and a power dissipation rating of 625mW. The device utilizes a TO-92 through-hole package configuration.

Feature Summary

  • High voltage capability suitable for demanding circuit environments
  • Robust current handling for small signal applications
  • Standardized through-hole mounting for reliable integration

Applications

  • General purpose amplifier circuits
  • Electronic switching applications
  • Signal processing stages

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm lead-free or tin/lead plating requirements. Confirm RoHS compliance status directly with the supplier as regulatory designations may vary by production batch. Ensure the requested packaging format matches the intended assembly process before finalizing orders.

Selection Notes

Select this component when a high-voltage NPN transistor is required for low-power signal conditioning. The 140V breakdown voltage provides significant headroom compared to standard 50V devices. Verify that the thermal management strategy accommodates the 625mW dissipation limit in the target enclosure environment.

Part Context

This part belongs to the 2N5550 series of NPN transistors manufactured by Central Semiconductor. It serves as a direct replacement for legacy Motorola/NXP 2N5550 specifications. The series is widely recognized for its reliability in discrete semiconductor applications requiring moderate voltage and current ratings.

Replacement Considerations

Direct substitutes include the 2N5551 PNP counterpart for complementary pairs. Other verified equivalents are the MPS-A55 and BC847B variants, provided pinout compatibility and electrical margins meet the specific circuit requirements.

2N5550 TRE TIN/LEAD2N5550 TRE TIN/LEAD
$0.16
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