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The Central Semiconductor Corp 2N5550 TRE TIN/LEAD is a silicon NPN small signal bipolar junction transistor designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 140V, a continuous collector current of 0.6A, and a power dissipation rating of 625mW. The device utilizes a TO-92 through-hole package configuration.
Verify the specific ordering suffix against manufacturer documentation to confirm lead-free or tin/lead plating requirements. Confirm RoHS compliance status directly with the supplier as regulatory designations may vary by production batch. Ensure the requested packaging format matches the intended assembly process before finalizing orders.
Select this component when a high-voltage NPN transistor is required for low-power signal conditioning. The 140V breakdown voltage provides significant headroom compared to standard 50V devices. Verify that the thermal management strategy accommodates the 625mW dissipation limit in the target enclosure environment.
This part belongs to the 2N5550 series of NPN transistors manufactured by Central Semiconductor. It serves as a direct replacement for legacy Motorola/NXP 2N5550 specifications. The series is widely recognized for its reliability in discrete semiconductor applications requiring moderate voltage and current ratings.
Direct substitutes include the 2N5551 PNP counterpart for complementary pairs. Other verified equivalents are the MPS-A55 and BC847B variants, provided pinout compatibility and electrical margins meet the specific circuit requirements.