2N5550

$0.03

Description：TRANS NPN 140V 0.6A TO92
Series：-

SKU:7df67f16a884 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 140V 0.6A TO92
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：140 V
Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：300MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92 (TO-226)
Grade：-
Qualification：-

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2N5550

Overview

The onsemi 2N5550 is an NPN silicon small-signal amplifier transistor housed in a TO-92 (TO-226AA) package. It supports a maximum collector current of 600 mA and features a collector-emitter breakdown voltage of 140 V, with a collector-base voltage rating of 160 V. The device operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a minimum DC current gain of 20 at 50 mA, a transition frequency up to 300 MHz, and a total power dissipation of 625 mW at 25°C ambient temperature.

Feature Summary

High-voltage capability suitable for demanding signal amplification tasks
Broad operating temperature range extending to high thermal limits
Fast switching performance supported by high transition frequency

Applications

General-purpose amplifier circuits
Switching applications requiring fast response times
Driver stages for loads or relays

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging type and lead-free status. Confirm that the component meets RoHS requirements if applicable to your manufacturing process. Ensure the selected variant matches the required shipping configuration for your assembly line.

Selection Notes

Select this component when a high-voltage NPN transistor is required for general-purpose amplification. Compare its 140 V collector-emitter rating against circuit requirements to ensure adequate headroom. Evaluate the thermal resistance values to determine if heatsinking is necessary for continuous operation above ambient temperatures.

Part Context

This component belongs to the 2N5550/2N5551 family of NPN silicon transistors designed for amplifier applications. The 2N5550 variant specifically provides a 140 V collector-emitter breakdown voltage, distinguishing it from higher-rated counterparts like the 2N5551. It utilizes a standard through-hole TO-92 form factor compatible with legacy and modern printed circuit board layouts.