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Product Detailed Parameters
- Description：TRANS NPN 140V 0.6A TO92
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：140 V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body
- Supplier Device Package：TO-92 (TO-226)
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5550G is an NPN silicon epitaxial planar transistor housed in a TO-92 (TO-226AA) through-hole package. It supports a maximum DC collector current of 600 mA and a collector-emitter breakdown voltage of 140 V. The device features a maximum power dissipation of 625 mW, a transition frequency of 300 MHz, and a maximum operating junction temperature of +150 °C. Electrical characteristics include a minimum DC current gain (hFE) of 60 at Ic=10mA, Vce=5V, and a maximum collector-base voltage of 160 V.
Feature Summary
- Utilizes NPN silicon epitaxial planar technology for reliable switching and amplification.
- Provides high collector-emitter voltage capability suitable for demanding circuit environments.
- Designed with a standard three-lead through-hole form factor for easy integration.
Applications
- General-purpose switching circuits
- Linear amplifier stages
- Driver applications requiring moderate voltage handling
Procurement Notes
Verify the specific manufacturer marking and datasheet revision when sourcing this component. Confirm that the TO-92 package dimensions match the design footprint requirements. Ensure compliance with relevant environmental directives such as RoHS if required by the final assembly specifications. Cross-reference the part number suffix to confirm exact electrical binning and packaging type.
Selection Notes
Select this component for designs requiring an NPN transistor with 140 V collector-emitter voltage and 600 mA continuous current capacity. Consider the 625 mW power dissipation limit and thermal management needs for the TO-92 package. Verify that the 300 MHz transition frequency meets the signal bandwidth requirements of the intended application circuit.
Part Context
The 2N5550G belongs to the standard 2N5550 series of small-signal NPN transistors. This series is widely recognized for general-purpose use in consumer electronics and industrial equipment. The 'G' suffix typically denotes a lead-free or specific manufacturing variant compliant with modern environmental standards, distinguishing it from older legacy versions.
Replacement Considerations
The 2N5551 is a verified substitute offering similar characteristics but with a higher collector-emitter breakdown voltage of 160 V. Other compatible replacements may include the MPS-A55 or equivalent NPN transistors within the same voltage and current ratings, provided pinouts and thermal limits are matched.
