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The onsemi 2N5550TA is a small-signal NPN bipolar junction transistor housed in a TO-92-3 through-hole package. It features a maximum collector current of 600 mA and a collector-emitter voltage rating of 140 V, with a collector-base voltage of 160 V. The device offers a transition frequency of 300 MHz and a power dissipation capacity of 625 mW. It operates at temperatures up to 150°C and provides a minimum DC current gain of 20.
Verify the specific suffix TA against official datasheets to confirm packaging type, such as cut tape or tube, as this affects handling procedures. Ensure the component meets RoHS compliance requirements for your assembly process. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Confirm that the TO-92-3 pinout matches your PCB footprint design before finalizing procurement.
Select this component when circuit designs require an NPN transistor capable of handling 140 V collector-emitter voltage. The 600 mA current rating makes it suitable for moderate load driving tasks. Consider the 625 mW power dissipation limit for thermal management planning. The TO-92-3 package is appropriate for through-hole mounting where space constraints allow for larger footprints compared to surface-mount alternatives.
The 2N5550TA belongs to the 2N5550 series of NPN silicon epitaxial planar transistors manufactured by onsemi. This series is designed for general-purpose amplification and switching applications. The TA suffix typically denotes a specific packaging configuration within the standard 2N5550 product line, ensuring compatibility with through-hole assembly processes commonly used in industrial and consumer electronics.
Direct substitutes include other 2N5550 variants from different manufacturers, provided they match the 140 V VCEO and 600 mA IC ratings. Verify that replacement parts maintain the same TO-92-3 package dimensions and pinout configuration to ensure mechanical fit without redesigning the PCB layout.