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Product Detailed Parameters
- Description：TRANS NPN 140V 0.6A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Cut Tape (CT),Tape & Box (TB)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：140 V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：300MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5550TAR is an NPN silicon epitaxial planar transistor housed in a TO-92-3 through-hole package. It features a maximum collector current of 600 mA and a collector-emitter voltage rating of 140 V, with a collector-base voltage of 160 V. The device supports a transition frequency up to 300 MHz and dissipates 625 mW of power. It operates at junction temperatures up to 150°C and includes a minimum DC current gain (hFE) of 20.
Feature Summary
- High-voltage NPN configuration suitable for amplifier applications
- Robust thermal performance with high maximum operating temperature
- Standardized TO-92-3 leaded package for reliable mounting
Applications
- General-purpose high-voltage amplification circuits
- Switching applications requiring moderate current handling
- Audio signal processing stages
Procurement Notes
Verify the specific suffix 'TAR' against official manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with automated assembly processes if reel quantities are required. Cross-reference datasheets for exact mechanical dimensions and marking codes to prevent integration errors during procurement.
Selection Notes
Select this component when designing circuits requiring high-voltage NPN switching or amplification within a compact through-hole form factor. Evaluate the 600 mA continuous current limit and 140 V breakdown voltage against circuit demands. Consider the 300 MHz transition frequency for bandwidth requirements and ensure adequate heat dissipation for the 625 mW power rating.
Part Context
This part belongs to the 2N5550 series of NPN silicon transistors manufactured by onsemi. It is designed as a general-purpose high-voltage device, often used in consumer electronics and industrial control systems where reliable amplification and switching are needed in standard leaded packages.
Replacement Considerations
Consult official substitution guides for equivalent NPN transistors with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics before replacing the original component in existing designs.
