2N5551 APM TIN/LEAD

2N5551 APM TIN/LEAD

$0.37
  • Description:160V 600MA 625MW TH TRANSISTOR-S
  • Series:-

SKU:e970050ceb36 Category: Brand:

  
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Product Detailed Parameters

  • Description:160V 600MA 625MW TH TRANSISTOR-S
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):160 V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5551 APM TIN/LEAD

Overview

The Central Semiconductor Corp 2N5551 APM TIN/LEAD is a general-purpose NPN bipolar junction transistor (BJT) designed for through-hole mounting. It features a maximum collector-emitter voltage of 160 V and a continuous collector current rating of 600 mA. The device operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 625 mW. It utilizes the TO-92-3 package configuration.

Feature Summary

  • High-voltage capability suitable for demanding switching applications
  • Hermetic sealing in specific variants for radiation resistance
  • General-purpose design for low-current precision circuits

Applications

  • Space and harsh environment electronics
  • Low current preamplifiers
  • Oscillator circuits
  • Current mirror configurations

Procurement Notes

Verify the exact suffix against official datasheets, as variations like 'APM' may indicate specific packaging or qualification standards. Confirm RoHS compliance status, as 'TIN/LEAD' implies non-compliance with lead-free regulations. Check for availability of hermetic versions if radiation hardness is required for the target application.

Selection Notes

Select this component when high voltage blocking is required alongside moderate current handling in a standard through-hole package. Consider the 2N5551HR variant if total ionizing dose immunity is necessary. Ensure the thermal management strategy accommodates the 625 mW power dissipation limit in the intended enclosure.

Part Context

This part belongs to the 2N5551 family of NPN transistors, widely used as a complement to the PNP 2N5401. While standard commercial versions are common, Central Semiconductor offers specialized variants for aerospace and defense sectors requiring enhanced reliability under extreme conditions.

Replacement Considerations

Public confirmed substitutes include the 2N5551BU from onsemi and the PMBT5551 from Nexperia in SOT23 packages. Verify pinout compatibility and thermal characteristics when substituting surface-mount alternatives for through-hole designs.

2N5551 APM TIN/LEAD2N5551 APM TIN/LEAD
$0.37
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