2N5551 APP PBFREE

2N5551 APP PBFREE

$0.33
  • Description:160V 600MA 625MW TH TRANSISTOR-S
  • Series:-

SKU:ae225c14b17c Category: Brand:

  
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Product Detailed Parameters

  • Description:160V 600MA 625MW TH TRANSISTOR-S
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):160 V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

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2N5551 APP PBFREE

Overview

The Central Semiconductor Corp 2N5551 APP PBFREE is a silicon NPN bipolar junction transistor (BJT) designed for through-hole mounting in TO-92-3 packages. It features a collector-emitter voltage rating of 160 V and a collector-base voltage of 180 V, with an emitter-base voltage limit of 6 V. The device supports a continuous collector current of 600 mA and dissipates up to 625 mW of power. Its transition frequency reaches 300 MHz, ensuring adequate high-frequency performance. Operating temperatures range from -65°C to +150°C.

Feature Summary

  • High-voltage capability suitable for demanding switching applications
  • Silicon construction ensures stable operation across wide temperature ranges
  • Through-hole TO-92-3 packaging facilitates standard circuit board integration

Applications

  • General-purpose switching circuits
  • Amplifier stages requiring moderate voltage handling
  • Industrial control systems operating in harsh thermal environments

Procurement Notes

Verify the specific suffix 'APP' against official datasheets to confirm any unique material or compliance specifications distinct from standard variants. Ensure the ordering quantity aligns with manufacturer minimum order requirements. Confirm RoHS status directly with the supplier documentation before finalizing procurement decisions.

Selection Notes

Select this component when designs require an NPN transistor with 160 V collector-emitter breakdown and 600 mA current capacity. The TO-92-3 package is appropriate for low-power through-hole implementations. Verify that the 300 MHz transition frequency meets the signal bandwidth requirements of the intended application circuit.

Part Context

This part belongs to the 2N5551 series of NPN transistors manufactured by Central Semiconductor. It serves as a general-purpose discrete semiconductor device. The series is commonly utilized in electronic circuits where reliable switching and amplification are required within specified voltage and current limits.

Replacement Considerations

Cross-reference with other manufacturers offering 2N5551 equivalents. Verify pinout compatibility and electrical parameter tolerances match the original design specifications before substitution.

2N5551 APP PBFREE2N5551 APP PBFREE
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