2N5551 APP TIN/LEAD

$0.37

Description：160V 600MA 625MW TH TRANSISTOR-S
Series：-

SKU:20e9c03da834 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：160V 600MA 625MW TH TRANSISTOR-S
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：160 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：300MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92
Grade：-
Qualification：-

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2N5551 APP TIN/LEAD

Overview

The Central Semiconductor Corp 2N5551 APP TIN/LEAD is an NPN silicon bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92-3 package. It features a collector-emitter voltage (VCEO) of 160 V and a collector-base voltage (VCBO) of 160 V, with a maximum DC collector current of 500 mA. The device has a power dissipation rating of 625 mW and a transition frequency (fT) of 300 MHz. Operating temperatures range from -65°C to +150°C. The component includes a minimum DC current gain (hFE) of 40 at 10 V and 1 mA.

Feature Summary

High-voltage capability suitable for demanding circuit environments
Hermetic sealing options available for radiation resistance
ESCC qualified for space and harsh environment applications

Applications

Low current precision circuits
Preamplifier stages
Oscillator configurations
Current mirror setups

Procurement Notes

Verify the specific suffix 'APP TIN/LEAD' against the official datasheet to confirm lead material composition and plating specifications. Ensure the ordering code matches the required hermetic or non-hermetic variant if radiation hardness is critical. Confirm that the TO-92-3 package aligns with your PCB footprint requirements before finalizing procurement.

Selection Notes

Select this component when high voltage isolation and moderate current handling are required in a small form factor. Consider the 160 V breakdown voltage for switching or amplification tasks exceeding standard low-voltage limits. Evaluate the thermal management needs given the 625 mW dissipation limit in the TO-92-3 package.

Part Context

This part belongs to the 2N5551 series of NPN transistors manufactured by Central Semiconductor. The series is engineered for reliability in severe conditions, including radiation exposure. It serves as a robust alternative for general-purpose high-voltage switching and linear amplification where standard commercial grade parts may lack sufficient voltage margins.