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The MCC 2N5551-BP is an NPN general-purpose amplifier transistor housed in a TO-92 package. It supports a maximum collector current of 600 mA and a collector-emitter voltage of 160 V. The device features a power dissipation rating of 625 mW and operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 80 to 300 at 10 mA, a transition frequency of 100 MHz, and a collector-base breakdown voltage of 180 V.
Verify the part number includes the BP suffix to confirm bulk packaging specifications. Confirm RoHS compliance status by checking for the P suffix designation if required. Ensure procurement channels are authorized distributors to guarantee genuine components with full traceability. Review the manufacturer's life support policy restrictions before deployment in critical systems.
Select this component for designs requiring high voltage blocking capability up to 160 V in a compact through-hole format. Consider the thermal resistance of 200°C/W when calculating heat dissipation requirements. Evaluate the hFE range of 80 to 300 against circuit gain stability needs. Compare the 600 mA continuous current limit against peak load demands.
This device belongs to the standard NPN bipolar junction transistor family designed for general-purpose use. It serves as a common replacement for legacy 2N5551 specifications in modern electronics. The TO-92 package provides a cost-effective solution for low-to-medium power discrete semiconductor applications.
Direct substitutes include other manufacturers' 2N5551 equivalents meeting identical electrical ratings. Verify pinout compatibility and package dimensions during cross-referencing. Ensure thermal performance matches the original design constraints.