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The 2N5551 PBFREE is a silicon NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It features a maximum collector-emitter voltage of 160 V and a continuous collector current rating of 600 mA. The device operates in a TO-92-3 through-hole package with a power dissipation capacity of 625 mW. Key electrical characteristics include a transition frequency of 250 MHz and a minimum DC current gain of 100 at 150 mA and 1 V. The component supports a wide operating temperature range from -65°C to +150°C.
Verify the specific manufacturer part number against official Central Semiconductor documentation, as generic designations may vary across distributors. Confirm RoHS3 compliance status directly from the datasheet. Check for any product change notices or end-of-life announcements prior to procurement. Ensure the TO-92-3 package type matches the target PCB footprint requirements.
Select this component when a standard NPN BJT with 160 V blocking capability and 600 mA current handling is required in a through-hole package. Compare the 250 MHz transition frequency against circuit speed requirements. Evaluate the 625 mW power dissipation limit against thermal management constraints in the final assembly. Verify that the TO-92-3 form factor fits the mechanical design.
This component belongs to the 2N5551 series of NPN transistors produced by Central Semiconductor Corp. The manufacturer specializes in discrete semiconductor products, including transistors, diodes, and MOSFETs. The company emphasizes custom solutions and high-reliability devices for industrial and commercial applications. The 2N5551 variant represents a standard general-purpose device within their broader portfolio.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other manufacturers' 2N5551 equivalents only if verified by official datasheets confirming identical pinouts and electrical limits.