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Product Detailed Parameters
- Description：TRANS NPN 160V 0.6A TO-92-3
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：160 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：300MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5551 TIN/LEAD is a silicon NPN transistor designed for high voltage amplifier applications. It features a collector-emitter breakdown voltage of 160 V and a continuous collector current rating of 600 mA. The device operates within a junction temperature range of -65°C to +150°C. Electrical characteristics include a minimum DC current gain (hFE) of 80 at 10 mA, a transition frequency (fT) up to 300 MHz, and a maximum power dissipation of 625 mW at ambient conditions. The component utilizes a TO-92 case with Tin/Lead plating.
Feature Summary
- Designed specifically for high voltage amplifier applications
- Utilizes a standard TO-92 through-hole package configuration
- Features Tin/Lead plated terminals for specific soldering requirements
Applications
- High voltage amplifier circuits
- General purpose switching applications
- Low noise signal processing stages
Procurement Notes
Verify the exact ordering suffix matches the required terminal finish. Confirm that the specified Tin/Lead plating aligns with project material specifications. Ensure the TO-92 package dimensions are compatible with the target PCB footprint. Validate that the thermal resistance parameters meet the system's heat dissipation requirements under expected operating loads.
Selection Notes
Select this component when a robust NPN transistor with high voltage capability is required for discrete amplifier designs. The TO-92 package facilitates easy prototyping and manual assembly. Consider the thermal limitations inherent to the plastic package when designing for continuous high-current operations. Verify compatibility with existing circuit biasing networks given the specified hFE ranges.
Part Context
This part belongs to the 2N5551 series of silicon NPN transistors manufactured by Central Semiconductor Corp. It serves as a general-purpose high-voltage switching and amplification device. The series is commonly used in consumer electronics and industrial control systems where reliable performance in standard through-hole configurations is necessary.
Replacement Considerations
Direct replacements must match the 160V VCEO rating and 600mA IC limit. Verify pinout compatibility for Emitter-Base-Collector orientation. Check if alternative manufacturers offer equivalent TO-92 packages with similar thermal characteristics.
