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The Central Semiconductor Corp 2N5551 TRA TIN/LEAD is a silicon NPN single bipolar junction transistor (BJT) designed for through-hole mounting in the TO-92-3 package. It features a maximum collector-emitter voltage of 160 V and a continuous collector current of 600 mA. The device supports a power dissipation of 625 mW with a transition frequency of 300 MHz. Operating temperatures range from -55°C to +150°C, ensuring reliability across diverse industrial environments.
Verify the specific suffix TRA against official datasheets to confirm lead finish and packaging variations. Ensure compatibility with RoHS directives if required by the target application. Cross-reference manufacturer part numbers to avoid confusion with similar variants. Confirm availability status directly with authorized distributors as supply levels fluctuate.
Select this component when a high-voltage NPN transistor with moderate current capacity is required. The 160 V rating distinguishes it from lower-voltage alternatives like the 2N4401. Consider the 300 MHz transition frequency for higher-speed switching needs compared to standard low-frequency devices. Evaluate thermal management requirements given the 625 mW power dissipation limit in the TO-92 package.
This component belongs to the broader family of NPN bipolar transistors manufactured by Central Semiconductor Corp. It shares functional similarities with other industry-standard parts but offers specific electrical characteristics tailored for high-voltage operations. The tin/lead finish indicates a specific solderability profile preferred in certain legacy or specialized manufacturing processes.
Direct substitutes include the onsemi 2N5551TA and Diotec Semiconductor 2N5551. Verify pinout compatibility and ensure that alternative manufacturers meet the same voltage and current ratings. Check for any differences in gain bandwidth product or saturation voltage that might impact circuit performance.